Current Mirror Circuits with Narrow Bandwidth Bias Noise Reduction

ABSTRACT

A current mirror circuit includes a first transistor connected to a voltage source, a gate of the first transistor being connected to a drain of the first transistor, a current source connected to the drain and the gate of the first transistor, the current source being configured to generate a predetermined first output current, a sample and hold circuit having an input connected to the gate of the first transistor, a second transistor connected to the voltage source, a gate of the second transistor being connected to an output of the sample and hold circuit, and a controller operatively connected to the sample and hold circuit, the controller being configured to operate the sample and hold circuit at a predetermined sampling frequency to attenuate bias noise from the first transistor in a second output current from the second transistor.

TECHNICAL FIELD

This disclosure relates generally to the field of electronic circuits,and, more particularly, to current mirror circuits.

BACKGROUND

Current mirror circuits are used in a wide range of electronic circuitswhere a single reference current source is used to control the output ofone or more “mirrored” current sources. In one common configuration, areference or “bias” current source generates an electrical current at apredetermined level. The bias current source is connected to a biastransistor. The bias current source generates a predetermined referencecurrent and the bias transistor also passes the current at the samelevel as the bias current source, which affects a voltage level at thegate of the bias transistor. The gate of the bias transistor isconnected to the gates of one or more additional or “mirrored”transistors that also pass current from an external power supply withreference to the gate voltage from the bias transistor. The mirroredcurrent sources often produce current at output levels that are amultiple of the reference current source. For example, some currentmirror configurations generate an output current at the same magnitudeas the reference current source (e.g. a multiplier of one). In otherembodiments, the mirrored output current is an integer multiple (e.g. amultiplier of 2×, 3×, 4×, etc.) or non-integer multiple (e.g. 0.5×,1.5×, 2.5×, etc.) of the reference current. A single reference currentsource can also be mirrored by an array of multiple current outputs thateach generate an output current based on the single reference currentsource.

In some configurations, the output of the current mirror circuit is usedin a larger circuit that processes signals at a particular frequency.For example, digital to analog converter (DAC) circuits often receive adigital input signal that is generated at a predetermined frequency andgenerate analog output signals corresponding to the value of the analogsignal. The current mirror circuit in a DAC includes one or more currentsources that are selectively activated and summed together to produce ananalog output signal with reference to the digital input signal. WhileDACs are one example of electronic components that employ currentmirrors, the current mirror circuits are used in other circuitconfigurations as well.

One issue with operation of a current mirror is that the output signalincludes noise from several different sources. One source of noise in acurrent mirror comes from a biasing circuit that typically includes atransistor that is operatively connected to the reference currentsource. A voltage at the gate of a bias transistor is influenced by theflow of current through the reference current source. The gate of thebias transistor is electrically connected to the gates of one or moreadditional transistors in the current mirror circuit to control the gatevoltage levels and corresponding levels of current that flow through theadditional transistors.

Prior art solutions to reduce the impact of noise in the output signalinclude either increasing the magnitude of the reference current throughthe bias transistor to reduce the relative level of the bias noisecompared to the overall level of current or adding a capacitor betweenthe biasing transistor and the transistors that produce the mirroredcurrent to form a filter. However, increasing the current level throughthe bias transistor also increases the overall power consumption of thecurrent mirror circuit. Additionally, capacitors that are large enoughto be effective at filtering noise in many circuits are too large to beincorporated in the current mirror in a practical manner. In manyapplications, only a comparatively narrow frequency band is of interestto the operation of the circuit that employs the current mirror. Forexample, in a DAC that is connected to a microelectromechanical system(MEMS) gyroscopic sensor, the frequency of interest corresponds to anarrow range of frequencies around a frequency of oscillation of thesensor. For example, the frequency of oscillation in many MEMSgyroscopes is typically in a range of tens or hundreds of kilohertz,with a frequency band of interest in a range of tens or hundreds ofhertz (e.g. an 80 Hz frequency band of interest around a 25 kHzoscillation frequency). Consequently, improvements to current mirrorcircuits that attenuate noise in a predetermined frequency range withoutrequiring large capacitors for filters would be beneficial.

SUMMARY

In one embodiment, a current mirror circuit that operates with reducedbias noise over narrow bandwidths has been developed. The current mirrorcircuit includes a first transistor connected to a voltage source, agate of the first transistor being connected to a drain of the firsttransistor, a current source connected to the drain and the gate of thefirst transistor, the current source being configured to generate apredetermined first output current, a sample and hold circuit having aninput connected to the gate of the first transistor, a second transistorconnected to the voltage source, a gate of the second transistor beingconnected to an output of the sample and hold circuit, and a controlleroperatively connected to the sample and hold circuit, the controllerbeing configured to operate the sample and hold circuit at apredetermined sampling frequency to attenuate bias noise from the firsttransistor in a second output current from the second transistor.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a current mirror circuit.

FIG. 2 is a schematic diagram of another current mirror circuit.

FIG. 3 is a graph that depicts a frequency distribution of bias noise inthe current mirror circuits of FIG. 1 and FIG. 2.

DETAILED DESCRIPTION

For the purposes of promoting an understanding of the principles of theembodiments described herein, reference is made to the drawings anddescriptions in the following written specification. No limitation tothe scope of the subject matter is intended by the references. Thedescription also includes any alterations and modifications to theillustrated embodiments and includes further applications of theprinciples of the described embodiments as would normally occur to oneskilled in the art to which this document pertains.

Many embodiments of the circuits described below incorporatetransistors. As is known to the art, different classes of transistorsinclude complementary metal oxide semiconductor (CMOS) transistors,bipolar transistors, which are also referred to as bipolar junctiontransistors (BJT), and numerous variations of these transistor types.Most transistors are modeled using three terminals, which are referredto as the “gate”, “source”, and “drain” in a CMOS transistor and as a“base”, “emitter”, and “collector” in a bipolar transistor. The pairs ofterms “gate” and “base”, “source” and “emitter”, and “drain” and“collector” refer to analogous terminals in CMOS and BJT transistors,respectively. For purposes of consistency, this document uses the“gate”, “source”, “drain” nomenclature that is commonly associated withCMOS transistors, but those of ordinary skill in the art shouldunderstand that, as used herein, the term “gate” in a CMOS transistoralso refers to a “base” in a BJT transistor. Similarly, as used herein,the term “source” also refers to an “emitter” and “drain” also refers toa “collector” in the transistor embodiments that are described below.

FIG. 1 is a schematic diagram of a current mirror circuit 100. Thecircuit 100 includes a current source 104, a first transistor 108, asample and hold circuit 128, a second transistor 148, and a voltagesupply (VDD, although the term VCC is also used conjunction with bipolartransistors) 160. The first transistor 108 is also referred to as a biastransistor and the second transistor 148 is also referred to as a mirrortransistor. The bias transistor 108 includes a source 110, gate 112, anddrain 114. The source 110 is connected to an output of VDD 160, the gateterminal 112 is connected directly to the drain terminal 114, and thedrain terminal 114 is connected to the current source 104. Duringoperation, the current source 104, which is also referred to as areference current source, draws a predetermined current through the biastransistor 108. The draw of the current generates a voltage at the gate112 that operates the transistor 108 with sufficient internal resistanceto pass current from the source VDD 160 at the same level as thereference current from the reference current source 104. In the circuit100, the first transistor 108 and the second transistor 148 are embodiedas either CMOS transistors, bipolar transistors, or any other suitableform of transistor that is configured to operate in a current mirrorcircuit.

The current mirror transistor 148 includes a source 150, gate 152, anddrain 154. The source 150 is connected to VDD 160, and the drain 154 isthe output of the mirror transistor 154. During operation, the currentmirror transistor 148 generates a current that either has the samemagnitude as the reference current source 104 or has a level that is apredetermined multiple of the current source 104 (e.g. 0.5×, 2×, 2.5×,3×, etc.), based on the structure and composition of the mirrortransistor 148.

In a traditional current mirror circuit, the gate of the bias transistoris connected directly to the gate of the mirror transistor so that thegates of both transistors have the same voltage level during operationof the current mirror circuit. In the circuit 100, however, the gate 112of the bias transistor 108 is connected to an input of a sample and holdcircuit 128, and an output of the sample and hold circuit 128 isconnected to the gate 152 of the mirror transistor 148. The sample andhold circuit 128 includes a switch 132, switch controller 136, and asample capacitor 140. The sample capacitor 140 is typically much smallerthan a capacitor that would be effective for filtering bias noise fromthe bias transistor 108. Indeed, the sample capacitor 140 remains smallby design to enable the sample capacitor 140 to charge quickly to thesame voltage level as the bias transistor gate 112 when the switch 132is closed during a sampling period. The switch 132 is, for example, asolid state transistor or other suitable switching device that isconfigured to open and close at a predetermined frequency. The switch132 includes an input terminal that is connected to the gate 112 in thebias transistor 108 and an output terminal that is connected to thesample capacitor 140 and the gates in one or more mirror transistors,such as the gate 152 in the mirror transistor 148. The switch controller136 is, for example, an oscillator, clock signal generator, or otherwaveform generator that generates a control signal to open and close theswitch 132 at the predetermined frequency.

In FIG. 1, the waveform 170 depicts an illustrative example of an outputclock signal from the switch controller 136 at a predetermined frequencyf_(clk). The spikes 172A and 172B represent sampling periods duringwhich the switch 132 closes and the capacitor 140 is charged to the samevoltage level as the voltage at the gate 112. The switch 132 remainsopen during the remainder of each clock cycle from the switch controller136. The spikes 172A and 172B represent a comparatively short duty cycle(e.g. 1% to 10%) for sampling that is sufficiently long to charge thesample capacitor 140 while leaving the bias transistor gate 112disconnected from the mirror transistor 148 during the most of eachsample and hold cycle. During the remainder of each duty cycle, thecapacitor 140 retains the voltage level from the bias transistor gate112 that is produced during the previous sampling period. As is known inthe art, the mirror transistor 148 has very high impedance at the gate152, so when the switch 132 is open the capacitor 140 retains thevoltage level that is produced during the sampling period with minimalloss during each clock cycle. Thus, the gate 152 of the mirrortransistor 148 receives the same voltage level from the capacitor 140that is generated during the sampling process from the bias transistorgate 112.

FIG. 2 is a schematic diagram of another configuration of a currentmirror circuit 200. The circuit 200 includes the current source 104,first transistor 108, sample and hold circuit 128, second transistor148, and VDD 160 of the circuit 100 in FIG. 1. The circuit 200 alsoincludes a plurality of additional mirror transistors, such as a thirdtransistor 248 and fourth transistor 268, and output switches 272A-272C.The third transistor 248 and fourth transistor 268 are examples of twoadditional mirror transistors that are both configured in a similarmanner to the first mirror transistor 148. Each of the transistors 248and 268 includes a gate that is connected to the output of the sampleand hold circuit 128, a source that is connected to the output of VDD160, and a drain for an output current that is connected to one of theswitches 272B and 272C, respectively. In the current mirror circuit 200,the transistor 148 generates an output current that is substantiallyequivalent the reference current from the reference current source 104.The transistors 248 and 268 produce power of two multiples of thereference current. For example, the transistor 248 generates an outputcurrent that is a multiple of 2× the reference current while thetransistor 268 generates an output that is a multiple of 4× (2²). Thecircuit 200 can include additional current mirror transistors thatprovide additional multiples of the reference current (e.g. 8×, 16×,32×, etc.).

The current mirror circuit 200 of FIG. 2 is depicted in a configurationthat can be incorporated into a DAC or other circuits that use a summedcurrent output during operation. The drains of the mirror transistors148, 248, and 268 are connected to switches 272A, 272B, and 272C,respectively. During operation, a decoder (not shown) connects theswitches 272A-272C to an output 276 or to electrical ground. The output276 generates a sum of the currents for any of the transistors 148, 248,and 268 that are connected to the output, such as 1× the reference(transistor 148), 2× the reference current (transistor 248), 4× thereference current (transistor 268), 3× the reference current(transistors 148 and 248), etc. FIG. 2 depicts a single output 276,although alternative embodiments that incorporate differential outputsinclude a positive output rail and negative output rail where each ofthe transistors 148, 248, and 268 is connected to one of the positiveand negative output rails in different operating configurations.

The current mirror circuits 100 and 200 are depicted using P-typetransistors, such as PNP bipolar or pMOS transistors. However, thecircuits 100 and 200 are merely illustrative embodiments of oneconfiguration of current mirror circuits. In another configuration, thecurrent mirror circuits 100 and 200 incorporate N-type transistors, suchas NPN bipolar or nMOS transistors. In a configuration of the currentmirror circuits that use N-type transistors, the source terminals of thebias transistor and the mirror transistors are connected to ground. Thevoltage source VDD is connected to the bias transistor in series throughthe reference current source, which is connected to the drain of thebias transistor. In the N-type configuration, the mirrored current flowsinto the mirror transistors through the drain terminals of the mirrortransistors. Aside from these differences, the general configuration andoperation of a current mirror circuit that uses N-type transistors issimilar to the illustrative embodiments of FIG. 1 and FIG. 2.

In both the circuits 100 and 200, the sample and hold circuit 128redistributes the bias noise that is inherent to the bias transistor todifferent frequencies other than the sampling frequency f_(clk). Forexample, FIG. 3 depicts a graph 300 of bias noise over a range offrequencies. In FIG. 3, the bias noise 304 is modeled as a uniform broadband noise source. The sample and hold circuit 128 operates at thepredetermined clock frequency f_(clk), which shifts the bias noiseenergy away from the clock frequency f_(clk) and one or more harmonicsof the clock frequency such as 2f_(clk) and 3f_(clk). In FIG. 3, thenotches 312A, 312B, and 312C are centered on the clock frequency f_(clk)and harmonics 2f_(clk) and 3f_(clk), respectively. The graph 300illustrates the first three harmonics for illustrative purposes, butthose having skill in the art should recognize that the pattern ofattenuation of the bias noise continues for higher frequency harmonicsof f_(clk) as well.

The bias noise is still present in the output from the current mirror,but the operation of the sample and hold circuit shifts the distributionof the bias noise. The sample and hold circuit 128 is configured as anideal sampler followed by a zero-order hold circuit that operates with atransfer function of:

$\frac{\sin ( {\pi \; x} )}{\pi \; x},$

which is also referred to as a sinc transfer function. The sinc transferfunction produces the notches in the frequency response that is depictedin FIG. 3 where the bias noise is attenuated in and around the switchingfrequency f_(clk) and harmonics of f_(clk) while the bias noiseincreases at different frequencies. For example, the noise regions 316A,316B, and 316C include greater levels of bias noise than is present inthe original bias noise signal 304. The increase in bias noise levelsover frequency ranges that are farther from f_(clk) and harmonics off_(clk) is due to aliasing in the sample and hold circuit 128 since thesample and hold circuit 128 samples at lower frequencies than much ofthe bias noise spectrum. However, the frequency band of interest aroundf_(clk) has a substantially lower level of bias noise, and the increasedbias noise at the other frequencies does not negatively affect operationof mirror circuit in a narrow bandwidth around f_(clk).

As described above, the sampling frequency f_(clk) is selected tocorrespond to a frequency band of interest in a larger circuit thatincorporates the current mirror. For example, when incorporated into aDAC that is part of a MEMS gyroscopic sensor that has a predeterminedfrequency of oscillation of 25 kHz, the sample and hold circuit 128 alsooperates at the 25 kHz frequency. Consequently, the output from thecurrent mirror in the DAC produces an output current with attenuatedbias noise around the predetermined clock frequency.

It will be appreciated that variants of the above-described and otherfeatures and functions, or alternatives thereof, may be desirablycombined into many other different systems, applications or methods.Various presently unforeseen or unanticipated alternatives,modifications, variations or improvements may be subsequently made bythose skilled in the art that are also intended to be encompassed by thefollowing claims.

What is claimed:
 1. A current mirror circuit comprising: a firsttransistor connected to a voltage source, a gate of the first transistorbeing connected to a drain of the first transistor; a current sourceconnected to the drain and the gate of the first transistor, the currentsource being configured to generate a predetermined first outputcurrent; a sample and hold circuit having an input connected to the gateof the first transistor; a second transistor connected to the voltagesource, a gate of the second transistor being connected to an output ofthe sample and hold circuit; and a controller operatively connected tothe sample and hold circuit, the controller being configured to operatethe sample and hold circuit at a predetermined sampling frequency toattenuate bias noise from the first transistor in a second outputcurrent from the second transistor.
 2. The current mirror circuit ofclaim 1, the second transistor being configured to generate the secondoutput current with a magnitude that is substantially equivalent to amagnitude of the first predetermined output current.
 3. The currentmirror circuit of claim 1, the second transistor being configured togenerate the second output current with a magnitude that is apredetermined multiple of a magnitude of the first predetermined outputcurrent.
 4. The current mirroring circuit of claim 1 further comprising:a third transistor connected to the voltage source, a gate of the thirdtransistor being connected to the output of the sampling circuit.
 5. Thecurrent mirroring circuit of claim 4, the second transistor beingconfigured to generate the second output current with a magnitude thatis substantially equivalent to a magnitude of the first predeterminedoutput current, and the third transistor being configured to generate athird output current with a magnitude that is a predetermined multipleof a magnitude of the first predetermined output current.
 6. The currentmirroring circuit of claim 4, the second transistor being configured togenerate the second output current with a magnitude that is a firstpredetermined multiple of a magnitude of the first predetermined outputcurrent, and the third transistor being configured to generate a thirdoutput current with a magnitude that is a second predetermined multipleof a magnitude of the first predetermined output current, the firstmultiple being different than the second multiple.
 7. The currentmirroring circuit of claim 1, the sample and hold circuit furthercomprising: a switch having an input terminal and an output terminal,the input terminal being operatively connected to the gate of the firsttransistor; and a capacitor operatively connected to the output terminalof the switch and the voltage source, the output terminal of the switchbeing connected to the gate of the first transistor.
 8. The currentmirror circuit of claim 7 wherein the switch is a switch transistor andthe switch controller is a clock signal generator that generates a clocksignal at the predetermined frequency to operate the switch transistorat the predetermined frequency.
 9. The current mirror of claim 1 whereinthe second output current from the second transistor is supplied to adigital to analog converter that produces an analog output signal withreference to a digital input signal.
 10. The current mirror circuit ofclaim 1 wherein the first transistor is a P-type transistor.
 11. Thecurrent mirror circuit of claim 1 wherein the first transistor is anN-type transistor.
 12. The current mirror circuit of claim 1 wherein thefirst transistor is a complementary metal oxide (CMOS) transistor. 13.The current mirror circuit of claim 1 wherein the second transistor is acomplementary metal oxide (CMOS) transistor.
 14. The current mirrorcircuit of claim 1 wherein the first transistor is a bipolar junctiontransistor (BJT).
 15. The current mirror circuit of claim 1 wherein thesecond transistor is a bipolar junction transistor (BJT).